| PART |
Description |
Maker |
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
Infineon Technologies AG
|
| BUZ100L C67078-S1354-A2 BUZ100LC67078-S1348-A2 BUZ |
N-Channel SIPMOS Power Transistor
Omnifet : fully autoprotected Power MOSFET
SIPMOS ? Power Transistor
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
http://
|
| NUS5530MNR2G |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Jewel Hill Electronic Co., Ltd.
|
| IPU14N03L |
30 A, 30 V, 0.0209 ohm, N-CHANNEL, Si, POWER, MOSFET
OptiMOS Power-Transistor Buck converter series
OptiMOS Power MOSFET, 30V, TO251, RDSon = 14.4mOhm, 30A, LL
|
INFINEON[Infineon Technologies AG]
|
| BSC030N03LSG |
Power Transistor
23 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET
OptiMOS? Power-MOSFET
OptiMOS?? Power-MOSFET
|
Infineon Technologies AG
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 90A型（丁）|51AA
HEXFET? Power MOSFET
SMPS MOSFET
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| LF2805A |
RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
|
Tyco Electronics
|
| IRFL9014 IRFL9014PBF |
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
Vishay Siliconix
|
| IPP042N03LG IPB042N03LG |
OptiMOS?? Power-Transistor
IPB042N03LG
OptiMOS? Power-Transistor
70 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Infineon Technologies AG
|
| SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
|
